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N-Channel 2.5V Specified MOSFET
Advanced Power Trench MOSFET with Low On-State Resistance
- Drain-Source Voltage: 20V
- Gate-Source Voltage: ±8V
- Drain Current – Continuous: 3A
- Drain Current – Pulsed: 20A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
- Package Includes: 1 x FDN339N MOSFET - (SMD SOT-23 Package) - 20V 3A N-Channel MOSFET
Top Features:
- 3A, 20V
- RDS(ON) = 0.035? @ VGS = 4.5V
- RDS(ON) = 0.050? @ VGS = 2.5V
- Low gate charge (7nC typical)
This N-Channel MOSFET is designed using advanced Power Trench technology to minimize on-state resistance and maintain low gate charge for superior switching performance. It has a high power and current handling capability, making it ideal for applications such as DC/DC converters and load switches.
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Images are for illustration only; actual product may vary.