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FDN337N MOSFET - (SMD SOT-23 Package) - 30V 2.2A N-Channel Logic Level Enhancement Mode MOSFET
High-density power field effect transistor for low voltage applications.
- Drain-Source Voltage: 30V
- Gate-Source Voltage: ±20V
- Drain Current – Continuous: 2.2A
- Drain Current – Pulsed: 10A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
- Package Includes: 1 x FDN337N MOSFET - (SMD SOT-23 Package) - 30V 2.2A N-Channel Logic Level Enhancement Mode MOSFET
Features:
- 2.2 A, 30 V
- RDS(ON) = 0.065? @ VGS = 4.5V
- RDS(ON) = 0.082? @ VGS = 2.5V
- Industry standard outline SOT-23 surface mount package
Super SOT-23 N-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
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Images are for illustration only; actual product may vary.