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P-Channel 2.6V Specified MOSFET
Advanced low voltage Power Trench process MOSFET for battery power management
- Drain-Source Voltage: -12V
- Gate-Source Voltage: ±8V
- Drain Current – Continuous: -2.6A
- Drain Current – Pulsed: -10A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
- Package Includes: 1 x FDN306P MOSFET - (SMD SOT-23 Package) - 12V 2.6A P-Channel MOSFET
Features:
- 2.4 A, -20 V
- RDS(ON) = 40 m? @ VGS = -4.5V
- RDS(ON) = 50 m? @ VGS = -2.5V
- RDS(ON) = 80 m? @ VGS = -1.8V
This P-Channel MOSFET uses advanced low voltage Power Trench process, optimized for battery power management applications. It offers fast switching speed and high performance Trench Technology for extremely low RDS(ON). The Super SOT-23 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Applications include battery management, load switch, and battery protection.
Need more details or interested in bulk pricing? Reach out to our sales team directly - sales02@thansiv.com +91-8095406416
Images are for illustration only; actual product may vary.