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CL100 NPN Transistor
Three-layer NPN device with amplified collector current for a given VCE
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 50V
- Continuous Collector Current (IC): 1A
- Emitter-Base Voltage (VEBO): 5V
- Power Dissipation (Pd): 3W
- Operating Temperature Range: -55 to 175°C
- DC Current Gain (hFE): 20
Features:
- High Ruggedness
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
CL100 is a three-layer NPN device where the collector current IC is a function of the base current IB. A change in the base current results in a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. It is easy to carry and handle.
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Images are for illustration only; actual product may vary.