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BU508A Transistor
A three-layer NPN device for high ruggedness in low distortion designs.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 1500V
- Continuous Collector Current (IC): 8A
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 125W
- Collector Peak Current (ICM): 15A
- Thermal Resistance Junction-Case: 2.5°C/W
- Fall Time (tF): 550 ns
- Transition Frequency (fT): 7MHz
Features:
- High Ruggedness
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BU508A is a three-layer NPN device within the working range where the collector current IC is a function of the base current IB. A change in the base current results in an amplified change in the collector current for a given collector-emitter voltage VCE. It is easy to carry and handle.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or +91-8095406416.
*Images are for illustration only; actual product may vary.