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BU505 Transistor
A three-layer NPN or PNP device for high ruggedness and low distortion designs.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 1500V
- Continuous Collector Current (Ic): 2.5A
- Continuous Base Current (Ib): 1A
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 75W
- Collector Peak Current (ICM): 4A
- Thermal Resistance Junction-Case: 1.67°C/W
- Fall Time (tF): 350 ns
Features:
- High Ruggedness
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BU505 is a three-layer NPN or PNP device within the working range. The collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. Easy to carry and handle.
Related Documents: BU505 Datasheet
Images are for illustration only; actual product may vary.