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BU406 Transistor
A three-layer NPN device with low saturation voltage for easy handling.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 200VDC
- Collector-Base Voltage (VCBO): 400VDC
- Emitter-Base Voltage (VEBO): 6VDC
- Continuous Collector Current (Ic): 7ADC
- Continuous Base Current (Ib): 4ADC
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 60W
- Current Gain Bandwidth (fT): 10MHz
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BU406 is a three-layer NPN device within the working range. The collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.
Easy to carry and handle, the BU406 transistor is designed for convenience in various applications.
Related Documents: BU406 Transistor Datasheet
* Images are for illustration only; actual product may vary.