×
BU208D
Three layer NPN device with low saturation voltage and high safe operating area.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 700V
- Collector-Emitter Voltage (VCES): 1500V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 5A
- Continuous Base Current (IB): 3.5A
- Operating Temperature Range: -65 - 115°C
- Power Dissipation (Pd): 60W
- Fall Time (tF): 0.6 µs
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BU208D is a three layer NPN device where the collector current (IC) is a function of the base current (IB). A change in the base current results in a corresponding amplified change in the collector current for a given collector-emitter voltage (VCE). It is easy to carry and handle, making it convenient for various applications.
Related Documents:
- BU208D Transistor Datasheet
Images are for illustration only; actual product may vary.