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BFW11 Semiconductor Device
A semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: N-Channel
- Drain-Source Voltage (VDS): 30VDC
- Drain-Gate Voltage (VDG): 30VDC
- Reverse Gate-Source Voltage (VGSR): 30VDC
- Forward Gate Current (IGF): 10mA
- Gate-Source Cut-off Voltage (VGS(off)): 6VDC
- Gate-Source Voltage (VGS): 4VDC
- Zero-Gate Voltage Drain Current (IDSS): 10mA
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (PD): 300mW
Features:
- Metal TO-72 can package
- Advanced process technology
- Low error voltage
- Fast switching speed
It is composed of semiconductor material with at least three terminals for external circuit connection. A transistor can amplify a signal as the output power can be higher than the input power. Many transistors are found embedded in integrated circuits.
Related Documents: BFW11 JFET Datasheet
* Images are for illustration only; actual product may vary.