BF494 Semiconductor Transistor
A versatile semiconductor device for signal amplification and power switching.
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): 30V
- Collector-Emitter Voltage (VCEO): 20V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 30mA
- Collector-Emitter Saturation Voltage (VCE(sat)): 0.2V
- Base-Emitter Saturation Voltage (VBE(sat)): 0.92V
- DC Current Gain (hFE): 67-222
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (PD): 350mW
Top Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
BF494 is a semiconductor device designed for amplifying electronic signals and handling electrical power. It features a PNP transistor polarity with various voltage ratings and current handling capabilities. The transistor offers a DC Current Gain (hFE) ranging from 67 to 222 and operates effectively within a wide temperature range of -55 to 150°C.
With a Collector-Base Voltage (VCBO) of 30V and Collector-Emitter Voltage (VCEO) of 20V, the BF494 transistor ensures reliable performance in signal amplification and power switching applications. Its low error voltage and fast switching speed make it an ideal choice for electronic circuits requiring high efficiency.
Whether used individually or within integrated circuits, the BF494 transistor delivers consistent and efficient performance across various electronic applications.
Related Documents: BF494 Transistor Datasheet
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