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BDX53C NPN Transistor
A three-layer NPN device with low saturation voltage for high-performance designs.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 100V
- Collector-Base Voltage (VCBO): 100V
- Continuous Collector Current (Ic): 8A
- Continuous Base Current (Ib): 0.2mA
- Operating Temperature Range: -65 to 150°C
- Power Dissipation (Pd): 60W
- DC Current Gain (hFE): 750
- Emitter-Base Voltage (VEBO): 5V
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BDX53C is a three-layer NPN device. The collector current IC varies based on the base current IB. A change in IB results in an amplified change in IC for a given VCE.
Easy to carry and handle, the BDX53C is a versatile transistor suitable for various applications in electronics.
Related Documents: BDX53C Transistor Datasheet
*Images are for illustration only; actual product may vary.