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BDW93C Transistor
A three-layer NPN device with low saturation voltage and high safe operating area.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 100V
- Collector-Base Voltage (VCBO): 100V
- Continuous Collector Current (Ic): 12A
- Continuous Base Current (Ib): 0.2A
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 80W
- DC Current Gain (hFE): 1000-20K
- Thermal Resistance Junction-case: 1.56°C/W
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BDW93C is a three-layer NPN device within the working range. The collector current IC is a function of the base current IB, with a change in the base current resulting in a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. It is easy to carry and handle.
Related Documents: BDW93C Transistor Datasheet
Images are for illustration only; actual product may vary.