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BD681
Three-layer NPN device for low distortion complementary designs
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 100V
- Collector-Base Voltage (VCBO): 100V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (Ic): 4A
- Continuous Base Current (Ib): 0.1A
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 40W
- DC Current Gain (hFE): 750
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BD681 is a three-layer NPN device within the working range. The collector current IC is a function of the base current IB, where a change in the base current results in a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. It is easy to carry and handle.
For more details or bulk pricing, reach out to our sales team directly at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.