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BD678 Three Layer PNP Transistor
A versatile PNP device known for its amplified change in collector current based on base current
- Transistor Polarity: PNP
- Collector-Emitter Voltage (VCEO): 60V
- Collector-Base Voltage (VCBO): 60V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 4A
- Continuous Base Current (IB): 0.1A
- Operating Temperature Range: -65 to 150°C
- Power Dissipation (PD): 40W
- DC Current Gain (hFE): 750
Key Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BD678 is a three layer PNP device that operates within a specific range. The collector current (IC) is dependent on the base current (IB), with a change in IB resulting in an amplified change in IC for a given collector-emitter voltage VCE.
Easy to carry and handle, this transistor is a reliable option for various applications.
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Images are for illustration only; actual product may vary.