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BD677 NPN Transistor
A three-layer NPN device with amplified change in collector current based on base current.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 60V
- Collector-Base Voltage (VCBO): 60V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (Ic): 4A
- Continuous Base Current (Ib): 0.1A
- Operating Temperature Range: -65 to 150°C
- Power Dissipation (Pd): 40W
- DC Current Gain (hFE): 750
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BD677 is designed for easy handling and portability, ensuring convenience for users.
For more details or bulk pricing, please contact our sales team directly at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.