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BD238 Transistor
A three-layer NPN or PNP device with low saturation voltage and high safe operating area
- Transistor Polarity: PNP
- Collector–Emitter Voltage (VCEO): 80V
- Collector–Base Voltage (VCBO): 100V
- Continuous Collector Current (IC): 2A
- DC Current Gain (hFE): 40
- Operating Temperature Range: -65°C to 150°C
- Power Dissipation (Pd): 25W
- Current Gain Bandwidth (fT): 3MHz
- Thermal Resistance (?JC): 5°C/W
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BD238 is a three-layer NPN or PNP device operating within the collector current IC range, which is a function of the base current IB. A change in the base current results in an amplified change in the collector current for a given collector-emitter voltage VCE. It is easy to carry and handle.
**Images are for illustration only; actual product may vary.**