×
BD138 Transistor
A versatile NPN or PNP device with amplified collector current
- Transistor Polarity: PNP
- Collector-Emitter Voltage (VCEO): 60V
- Collector-Base Voltage (VCBO): 60V
- Continuous Collector Current (Ic): 1.5A
- Continuous Base Current (Ib): 0.5A
- DC Current Gain (hFE): 40-250
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 12.5W
- Thermal Resistance (?JA): 100°C/W
- Thermal Resistance (?JC): 10°C/W
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BD138 is a three-layer NPN or PNP device working within the specified range. The collector current IC is a function of the base current IB, resulting in an amplified change in collector current for a given VCE.
Easy to carry and handle, the BD138 transistor is designed for convenience and efficiency in various applications.
For more detailed technical information, refer to the BD138 Transistor Datasheet.
Images are for illustration only; actual product may vary.