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BD136 Transistor
A versatile NPN or PNP device with low saturation voltage and high safe operating area.
- Transistor Polarity: PNP
- Collector-Emitter Voltage (VCEO): 45V
- Collector-Base Voltage (VCBO): 45V
- Continuous Collector Current (Ic): 1.5A
- Continuous Base Current (Ib): 0.5A
- DC Current Gain (hFE): 40-250
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 12.5W
- Thermal Resistance (?JA): 100°C/W
- Thermal Resistance (?JC): 10°C/W
Top Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BD136 is a three-layer NPN or PNP device operating within a specified working range. The collector current IC varies as a function of the base current IB, providing an amplified change in the collector current for a given collector-emitter voltage VCE.
Easy to carry and handle, the BD136 transistor is suitable for various electronic applications where reliability and performance are crucial.
Related Documents: BD136 Transistor Datasheet
*Images are for illustration only; actual product may vary.