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BD135 Transistor
Three-layer NPN/PNP device with low saturation voltage for amplified collector current changes.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 45V
- Collector-Base Voltage (VCBO): 45V
- Continuous Collector Current (Ic): 1.5A
- Continuous Base Current (Ib): 0.5A
- DC Current Gain (hFE): 40-250
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 12.5W
- Thermal Resistance (?JA): 100°C/W
- Thermal Resistance (?JC): 10°C/W
Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BD135 is a three-layer NPN or PNP device within the working range. The collector current IC is a function of the base current IB, with a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. It is easy to carry and handle.
For related documents, view the BD135 Transistor Datasheet.
Images are for illustration only; actual product may vary.