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BC639 Semiconductor Transistor
A semiconductor device for amplifying and switching electronic signals
- Transistor Polarity: NPN
- Collector-Emitter Breakdown Voltage (BVCEO): 80V
- Collector-Emitter Voltage (VCEO): 80V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 1A
- Base Current (IB): 100mA
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE): 40-160
- Operating Temperature Range: -65 - 150°C
- Collector Power Dissipation (PC): 1W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
BC639 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
Related Documents:
- BC639 Transistor Datasheet
* Images are for illustration only; actual product may vary.