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BC635 Semiconductor Transistor
Amplify or switch electronic signals and power with precision.
- Transistor Polarity: NPN
- Collector-Emitter Breakdown Voltage (BVCEO): 45V
- Collector-Emitter Voltage (VCEO): 45V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 1A
- Base Current (IB): 100mA
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE): 40-250
- Operating Temperature Range: -65 - 150°C
- Collector Power Dissipation (PC): 1W
Top Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
BC635 is a semiconductor device with at least three terminals for circuit connection. It offers the ability to amplify signals efficiently. Transistor packaging can be individual or part of integrated circuits for diverse applications.
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Images are for illustration only; actual product may vary.