BC516 Semiconductor Device
A semiconductor device for amplifying and switching electronic signals and power.
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): 40V
- Collector-Emitter Voltage (VCEO): 30V
- Emitter-Base Voltage (VEBO): 10V
- Continuous Collector Current (IC): 1A
- Collector-Emitter Breakdown Voltage: 30V
- Base-Emitter On Voltage (VBE(on)): 1.4V
- Transition Frequency (fT): 200MHz
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (PD): 625mW
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
The BC516 semiconductor device is crucial for amplifying electronic signals and power in various circuits. With a PNP transistor polarity, it has a Collector-Base Voltage (VCBO) of 40V, a Collector-Emitter Voltage (VCEO) of 30V, and an Emitter-Base Voltage (VEBO) of 10V. The device can handle a Continuous Collector Current (IC) of 1A and has a Collector-Emitter Breakdown Voltage of 30V. The Base-Emitter On Voltage (VBE(on)) is 1.4V, with a Transition Frequency (fT) of 200MHz. Operating efficiently in the temperature range of -55 to 150°C, it has a Power Dissipation (PD) of 625mW.
Today, transistors like the BC516 are essential components, either packaged individually or integrated into circuits, to control and amplify electronic signals effectively.
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Images are for illustration only; actual product may vary.