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BC338 Semiconductor Transistor
A semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: NPN
- Collector-Emitter Breakdown Voltage (BVCEO): 25V
- Collector-Emitter Voltage (VCEO): 25V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 800mA
- Output Capacitance (Cobo): 12pF
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE): 100-630
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (PD): 625mW
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
BC338 is composed of semiconductor material with at least three terminals. It allows for voltage or current control at one pair of terminals influencing the current at another pair. With the capability to amplify output power higher than the input, it is an essential component in many electronic circuits.
Today, transistors like BC338 can be found either as individual components or embedded within integrated circuits, serving crucial roles in modern electronics.
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Images are for illustration only; actual product may vary.