×
BC337 Semiconductor Device
A versatile semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 50VDC
- Collector-Emitter Voltage (VCEO): 45VDC
- Emitter-Base Voltage (VEBO): 5VDC
- Continuous Collector Current (IC): 800mA
- Output Capacitance (Cobo): 15pF
- Transition Frequency (fT): 210MHz
- DC Current Gain (hFE): 100-630
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (PD): 1.5W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
The BC337 semiconductor device is composed of semiconductor material and features at least three terminals for connection to an external circuit. By applying a voltage or current to one pair of the terminals, the current through another pair of terminals can be controlled, allowing for signal amplification. With high power and current handling capability, this device is suitable for various electronic applications.
While some transistors are individually packaged, many are integrated into circuits for optimized functionality.
* Images are for illustration only; actual product may vary.