×
BC237 Semiconductor Device
A semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: NPN
- Collector-Emitter Breakdown Voltage (BVCEO): 45V
- Collector-Emitter Voltage (VCEO): 45V
- Emitter-Base Voltage (VEBO): 6V
- Continuous Collector Current (IC): 100mA
- Output Capacitance (Cobo): 6pF
- Transition Frequency (fT): 250MHz
- DC Current Gain (hFE): 120-800
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (PD): 500mW
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
The BC237 is composed of semiconductor material with at least three terminals for external circuit connections. By applying voltage or current to one set of terminals, the current through another set is controlled, enabling signal amplification. It has high power and current handling capability and can operate with full voltage. Transistors like BC237 can be used for amplification as well as switching purposes. While some transistors are individually packaged, many are also integrated into circuits.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or call +91-8095406416.
*Images are for illustration only; actual product may vary.