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BC213 Semiconductor Device
A versatile semiconductor device for signal amplification and power switching.
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): 45VDC
- Collector-Emitter Voltage (VCEO): 30VDC
- Emitter-Base Voltage (VEBO): 5VDC
- Continuous Collector Current (IC): 100mA
- Output Capacitance (Cobo): 6pF
- Transition Frequency (fT): 360MHz
- DC Current Gain (hFE): 40
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (PD): 1W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
BC213 is a semiconductor device utilized for amplifying or switching electronic signals and power. It consists of semiconductor material with at least three terminals for external circuit connection. By applying voltage or current to one pair of terminals, the current through another pair is controlled. The transistor can amplify a signal as the output power can exceed the input power. Nowadays, transistors can be packaged individually or embedded in integrated circuits.
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* Images are for illustration only; actual product may vary.