4N36 Optocoupler Phototransistor IC DIP-8 Package
High-performance optocoupler with 5000 VRMS isolation test voltage
- Reverse voltage: 6V
- Forward current: 60mA
- Surge current: 2.5A
- Power dissipation: 70mW
- Collector-emitter breakdown voltage: 70V
- Emitter-base breakdown voltage: 7V
- Collector current: 50mA
- Package Includes: 1 x 4N36 Optocoupler Phototransistor IC DIP-8 Package
Top Features:
- 5000 VRMS isolation test voltage
- Interfaces with common logic families
- Input-output coupling capacitance < 0.5 pF
- RoHS directive 2002/95/EC compliant
4N36 optocoupler consists of gallium arsenide infrared LED and a silicon NPN photo transistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5000 VRMS isolation test voltage. This isolation performance is accomplished through double molding isolation manufacturing process. Compliance to DIN EN 60747-5-5 partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.
Applications:
- AC mains detection
- Reed relay driving
- Switch mode power supply feedback
- Telephone ring detection
Agency Approvals:
- UL file no. E52744 (pending)
- cUL tested to CSA 22.2 bulletin 5A
- DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5(pending), available with option 1
- BSI: EN 60065, EN 60950-1
- FIMKOCQC
*Images are for illustration only; actual product may vary.