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2SK3550 MOSFET
New generation high-voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Collector Current (Ic): 10A
- Drain-Source Resistance (Rds On): 1.4Ohms
- Gate-Source Voltage (Vgs): 30V
- Configuration: Single
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 130W
Features:
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
The 2SK3550 is designed for various AC/DC power conversions in switching mode operations, ideal for system miniaturization and higher efficiency. Its advanced technology minimizes conduction loss, provides superior switching performance, and enhances resistance to extreme dv/dt rate and higher avalanche energy.
For more details or bulk pricing inquiries, contact our sales team directly at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.