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2SK2968 High Voltage MOSFET
New generation MOSFET with advanced charge balance mechanism for superior performance.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 900V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 1.25Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 70 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 150W
Features:
- Low drain-source ON resistance
- High forward transfer admittance
- Low leakage current
- Enhancement mode
The 2SK2968 is a part of the new generation high voltage MOSFET family, designed with an advanced charge balance mechanism for exceptional low on-resistance and lower gate charge performance. This technology minimizes conduction loss, offers superior switching performance, and can handle extreme dv/dt rates and higher avalanche energy, making it ideal for various AC/DC power conversion applications in switching mode operations. It enables system miniaturization and enhances efficiency.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.