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2SK2225 Power MOSFET
Efficient and reliable device for a wide range of applications
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1500V
- Continuous Drain Current (Id): 2A
- Drain-Source Resistance (Rds On): 12Ohms
- Gate-Source Voltage (Vgs): 20V
- Configuration: Single
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 50W
Features:
- High breakdown voltage VDSS = 1500 V
- High speed switching
- Low drive current
- No secondary breakdown
2SK2225 utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Related Documents: 2SK2225 MOSFET Datasheet
* Images are for illustration only; actual product may vary.