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2SK1118 High Voltage MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism for superior performance
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Collector Current (Ic): 6A
- Drain-Source Resistance (Rds On): 1.25Ohms
- Gate-Source Voltage (Vgs): 3.5V
- Configuration: Single
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 45W
Features:
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
2SK1118 is part of a new generation of high voltage MOSFETs that utilize an advanced charge balance mechanism to achieve outstanding low on-resistance and lower gate charge performance. This technology minimizes conduction loss, provides superior switching performance, and withstands extreme dv/dt rate and higher avalanche energy. It is ideal for various AC/DC power conversion in switching mode operations, enabling system miniaturization and higher efficiency.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.