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2SC3320 Semiconductor Device
A semiconductor device used for signal amplification and switching.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 500V
- Collector-Emitter Voltage (VCEO): 400V
- Emitter-Base Voltage (VEBO): 7V
- Continuous Collector Current (IC): 15A
- Base Current (IB): 5A
- Emitter Cut-Off Current (IEBO): 1mA
- DC Current Gain (hFE): 10
- Operating Temperature Range: -65°C to 150°C
- Collector Power Dissipation (PC): 80W
Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
2SC3320 is composed of semiconductor material with at least three terminals for external circuit connection. It allows control of current through one terminal based on the voltage or current applied to another. The transistor can amplify signals due to higher output power than input power. While some transistors are individual, many are integrated into circuits.
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Images are for illustration only; actual product may vary.