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2N7000
N-channel enhancement mode field effect transistors with high cell density DMOS technology.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 200mA
- Drain-Source Resistance (Rds On): 5Ohms
- Gate-Source Voltage (Vgs): 20V
- Configuration: Single
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 400mW
Features:
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
2N7000 is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It can be used in applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. Particularly suited for low-voltage, low-current applications like small servo motor control, power MOSFET gate drivers, and other switching applications.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.