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2N6111 Semiconductor Transistor
A versatile semiconductor device for signal amplification and switching.
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): 40V
- Collector-Emitter Voltage (VCEO): 30V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 7A
- Output Capacitance (Cobo): 250pF
- Transition Frequency (fT): 10MHz
- DC Current Gain (hFE): 30-150
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (PD): 40W
Top Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
2N6111 is a semiconductor device with at least three terminals for external circuit connection. It enables signal amplification and power control by regulating current through its terminals. The transistor's output power can exceed the input power, allowing signal amplification. While some transistors are standalone, many are integrated into circuits for various applications.
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Images are for illustration only; actual product may vary.