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2N5416 Semiconductor Transistor
A semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): 350V
- Collector-Emitter Voltage (VCEO): 300V
- Emitter-Base Voltage (VEBO): 6V
- Continuous Collector Current (IC): 1A
- Output Capacitance (Cobo): 15pF
- Collector-Emitter Breakdown Voltage (V(BR)CEO): 300V
- DC Current Gain (hFE): 30-120
- Operating Temperature Range: -65 - 200°C
- Power Dissipation (PD): 10W
- Packaging: Metal TO-39 can
Features:
- Metal TO-39 can package
- Advanced process technology
- Low error voltage
- Fast switching speed
2N5416 is composed of semiconductor material typically with at least three terminals for external circuit connection. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair. As the output power can be higher than the input power, the transistor can amplify signals. While some transistors are individually packaged, many are integrated into circuits.
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*Images are for illustration only; actual product may vary.