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2N5088 Semiconductor Device
A versatile semiconductor for signal amplification and power switching.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 35VDC
- Collector-Emitter Voltage (VCEO): 30VDC
- Emitter-Base Voltage (VEBO): 3VDC
- Continuous Collector Current (IC): 50mA
- Collector-Base Capacitance (Ccb): 4pF
- Transition Frequency (fT): 50MHz
- DC Current Gain (hFE): 300-900
- Operating Temperature Range: -55°C to 150°C
- Power Dissipation (PD): 1.5W
Top Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
2N5088 is a semiconductor device used for amplifying or switching electronic signals and electrical power. It consists of semiconductor material with at least three terminals for circuit connection. By applying voltage or current to one pair of terminals, the current through another pair is controlled, allowing signal amplification. While some transistors are individually packaged, many are embedded in integrated circuits.
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Images are for illustration only; actual product may vary.