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2N4401 Semiconductor Device
A semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 60VDC
- Collector-Emitter Voltage (VCEO): 40VDC
- Emitter-Base Voltage (VEBO): 6VDC
- Continuous Collector Current (IC): 600mA
- Collector-Base Capacitance (Ccb): 6.5pF
- Transition Frequency (fT): 250MHz
- DC Current Gain (hFE): 100-300
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (PD): 1.5W
Top Features:
- Advanced process technology
- Low error voltage
- Fast switching speed
- Full-voltage operation
2N4401 is a semiconductor device used for amplifying or switching electronic signals and electrical power. It is made of semiconductor material with at least three terminals for connecting to an external circuit. By applying voltage or current to one pair of terminals, the current through another pair can be controlled, allowing for signal amplification. The transistor's output power can be higher than the input power, enabling signal amplification. While some transistors are individually packaged, many are integrated into circuits.
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* Images are for illustration only; actual product may vary.