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2N3866 Semiconductor Device
Semiconductor device for amplifying or switching electronic signals and power.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 60VDC
- Collector-Emitter Voltage (VCEO): 30VDC
- Emitter-Base Voltage (VEBO): 305VDC
- Continuous Collector Current (IC): 400mA
- Output Capacitance (Cob): 3.5pF
- Collector-Emitter Saturation Voltage (VCE(sat)): 1VDC
- Power Output (Pout): 1-2W
- Operating Temperature Range: -65°C to 200°C
- Power Dissipation (PD): 1W
Features:
- Metal TO-39 can package
- Advanced process technology
- Low error voltage
- Fast switching speed
2N3866 is composed of semiconductor material with at least three terminals for external circuit connection. A voltage or current applied to one pair of terminals controls the current through another pair, allowing signal amplification. Individual packaging or integration into circuits is common in modern transistors.
Related Documents: 2N3866 Transistor Metal Datasheet
* Images are for illustration only; actual product may vary.