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2N3773 Semiconductor Device
A semiconductor device for amplifying or switching electronic signals and electrical power.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 160V
- Collector-Emitter Voltage (VCEO): 140V
- Emitter-Base Voltage (VEBO): 7V
- Continuous Collector Current (IC): 16A
- Collector cut-off current (ICEO): 10mA
- Emitter cut-off current (IEBO): 5mA
- DC Current Gain (hFE): 15-60
- Operating Temperature Range: -65 - 200°C
- Power Dissipation (PD): 150W
- Pack/Unit: Individual
Top Features:
- Metal TO-3 CAN case
- High power dissipation
- Fast switching speed
- High power and current handling capability
2N3773 is composed of semiconductor material with at least three terminals for connection to an external circuit. It allows control of current through different terminals based on the voltage or current applied to one pair. With the capability to amplify a signal, it offers advanced process technology and low error voltage for efficient operation.
While some transistors are individually packaged, many more are integrated into circuits for various applications.
Related Documents: 2N3773 Transistor Metal Datasheet
* Images are for illustration only; actual product may vary.