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2N3440 Silicon NPN Transistor
Silicon epitaxial planar transistor for consumer and industrial applications
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 300V
- Collector-Emitter Voltage (VCEO): 250V
- Emitter-Base Voltage (VEBO): 7V
- Continuous Collector Current (IC): 1A
- Base Current (IB): 0.5A
- Transition Frequency (fT): 15MHz
- DC Current Gain (hFE): 40-160
- Operating Temperature Range: -65 - 200°C
- Power Dissipation (PD): 10W
Features:
- Metal TO-39 can package
- Advanced process technology
- Low error voltage
- Fast switching speed
Designed for use as drivers in high-voltage low current inverters, switching, and series regulators in various applications.
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*Images are for illustration only; actual product may vary.