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2N3055 Semiconductor Device
A versatile semiconductor device for electronic signal amplification and power switching.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 100V
- Collector-Emitter Voltage (VCEO): 60V
- Emitter-Base Voltage (VEBO): 7V
- Continuous Collector Current (IC): 15A
- Collector cut-off current (ICEO): 0.7mA
- Emitter cut-off current (IEBO): 5mA
- DC Current Gain (hFE): 20-70
- Operating Temperature Range: -65 - 200°C
- Power Dissipation (PD): 115W
Top Features:
- Metal TO-3 case
- Advanced process technology
- Low error voltage
- Fast switching speed
2N3055 is a semiconductor device designed with at least three terminals for external circuit connection, allowing voltage or current applied to one terminal pair to control the current through another pair. This capability enables signal amplification due to the higher output power compared to the input power. While some transistors are individual units, many are integrated into circuits for various electronic applications.
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Images are for illustration only; actual product may vary.