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2N3054 Semiconductor Device
A semiconductor device for signal amplification and power switching.
- Transistor Polarity: NPN
- Collector-Base Voltage (VCBO): 90V
- Collector-Emitter Voltage (VCEO): 55V
- Emitter-Base Voltage (VEBO): 7V
- Continuous Collector Current (IC): 4A
- Collector cut-off current (ICEO): 0.5mA
- Emitter cut-off current (IEBO): 1mA
- DC Current Gain (hFE): 8-80
- Operating Temperature Range: -65 - 200°C
- Power Dissipation (PD): 25W
Top Features:
- Metal TO-66 case
- Advanced process technology
- Low error voltage
- Fast switching speed
2N3054 is a semiconductor device used to amplify or switch electronic signals and electrical power. It has at least three terminals for connection to an external circuit. A transistor can amplify a signal as the controlled power can be higher than the input power.
Today, transistors can be found individually packaged or embedded in integrated circuits for various applications.
Related Documents: 2N3054 Transistor Metal Datasheet
* Images are for illustration only; actual product may vary.