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2N2907A Semiconductor Transistor
A versatile semiconductor device for signal amplification and power switching.
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): 60V
- Collector-Emitter Voltage (VCEO): 60V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 600mA
- Input Capacitance (Cib): 30pF
- Output Capacitance (Cob): 8pF
- DC Current Gain (hFE): 100-300
- Operating Temperature Range: -55 - 200°C
- Power Dissipation (PD): 625mW
Features:
- Plastic TO-92 package
- Advanced process technology
- Low error voltage
- Fast switching speed
2N2907A is composed of semiconductor material with at least three terminals for external circuit connection. It amplifies output power higher than input power due to controlled current. Many transistors are individually packaged or embedded in ICs.
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Images are for illustration only; actual product may vary.