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2N2906
A semiconductor device for signal amplification and power switching.
- Transistor Polarity: PNP
- Collector-Base Voltage (VCBO): 60V
- Collector-Emitter Voltage (VCEO): 40V
- Emitter-Base Voltage (VEBO): 5V
- Continuous Collector Current (IC): 600mA
- Collector Base Capacitance (CCBO): 8pF
- Transition Frequency (fT): 200MHz
- DC Current Gain (hFE): 40-120
- Operating Temperature Range: -65 - 200°C
- Power Dissipation (PD): 3W
Features:
- Metal TO-18 can package
- Advanced process technology
- Low error voltage
- Fast switching speed
2N2906 is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
For more information and specifications, refer to the 2N2906 Transistor Metal Datasheet.
*Images are for illustration only; actual product may vary.