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20N60
High-voltage MOSFET offering low on-resistance and superior switching efficiency.
20N60 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Key Features
- Revolutionary high-voltage charge balance mechanism
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv/dt rate capability
- High peak current capability
- Improved transconductance
Detailed Specifications
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 650V
- Continuous Drain Current (Id): 20.7A
- Drain-Source Resistance (Rds On): 190mOhms
- Gate-Source Voltage (Vgs): 20V
- Configuration: Single
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 208W
Related Documents: 20N60 MOSFET TO-247 Datasheet