IN5819 Series Schottky Barrier Diode
Schottky rectifier optimized for low forward voltage drop and moderate leakage.
- Peak Repetitive Reverse Voltage: 40 V
- Working Peak Reverse Voltage: 40 V
- DC Blocking Voltage: 40 V
- RMS Reverse Voltage: 28 V
- Non-Repetitive Peak Reverse Voltage: 48 V
- Average Rectified Output Current: 1 A
- Non-Repetitive Peak Forward Surge Current: 25 A
- Operating Junction Temperature Range: -65 to +125 °C
Top Features:
- Extremely Low VF
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency
- Lead-Free Devices
The IN5819 series utilizes the Schottky Barrier principle in a metal-to-silicon power diode. It features chrome barrier metal, epitaxial construction with oxide passivation, and metal overlap contact. Ideal for rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection diodes.
Optimized for very low forward voltage drop and moderate leakage, this axial leaded Schottky rectifier is commonly used in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
Additional Mechanical Characteristics:
- Case: Epoxy, Molded
- Weight: 0.4 Gram (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds
- Polarity: Cathode Indicated by Polarity Band
- ESD Ratings: Machine Model = C (>400 V), Human Body Model = 3B (>8000 V)
Guard ring for enhanced ruggedness and long-term reliability. High purity, high-temperature epoxy encapsulation provides enhanced mechanical strength and moisture resistance. Suitable for high-frequency operation.
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*Images are for illustration only; actual product may vary.