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TLP290-4 Photo Transistor
Compact and reliable photo transistor for high-density surface mounting applications.
- Collector-Emitter Voltage: 80 V (min)
- Current Transfer Ratio: 50% (min) Rank GB: 100% (min)
- Isolation Voltage: 2500 Vrms (min)
- Operating Temperature: -55 to 110 °C
Features:
- 80V Collector-Emitter Voltage
- 50% Current Transfer Ratio
- Isolation Voltage of 2500 Vrms
- Guaranteed performance from -55 to 110 °C
The TLP290-4 consists of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. It is housed in the SO16 package, a very small and thin coupler, making it suitable for high-density surface mounting applications such as programmable controllers and hybrid ICs.
Specifications:
- Forward Current (IF(RMS)): ±50 mA
- Forward Current Derating: -0.67 mA/°C (Ta ? 50°C)
- Pulse Forward Current (IFP): ±1 A
- Junction Temperature (Tj): 125 °C
- Collector-Emitter Voltage (VCEO): 80 V
- Emitter-Collector Voltage (VECO): 7 V
- Collector Current (IC): 50 mA
- Collector Power Dissipation (PC): 100 mW
- Operating Temperature Range (Topr): -55~100 °C
- Storage Temperature Range (Tstg): -55~125 °C
- Lead Soldering Temperature (Tsol): 260°C (10s)
- Total Package Power Dissipation (PT): 170 mW
- Total Package Power Dissipation Derating: -1.7 mW/°C (Ta ? 25°C)
- Isolation Voltage (BVs): 2500 Vrms
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* Images are for illustration only; actual product may vary.