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STGW19NC60HD Ultrafast IGBT
Advanced IGBT with excellent switching performance and low on-state behavior
- Symbol Parameter: Min Type Max Units
- V(BR)CES: Collector-emitter breakdown voltage (VGE= 0) - 600 V
- VCE(sat): Collector-emitter saturation voltage VGE= 15 V, IC= 12 A - 1.8 2.5 V
- VGE(th): Gate threshold voltage - 5.75 V
- ICES: Collector cut-off current (VGE = 0) VCE= 600 V - 3.75 150 µA
- IGES: Gate-emitter leakage current (VCE = 0) - ±100 nA
- gfs: Forward transconductance - 5 S
Top Features:
- Low on-voltage drop (VCE(sat))
- Very soft ultrafast recovery anti-parallel diode
Applications:
- High frequency motor drives
- SMPS and PFC in both hard switch and resonant topologies
Related Document: STGW19NC60HD IGBT Data Sheet
Images are for illustration only; actual product may vary.