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STGF19NC60KD IGBT Devices
Fast IGBTs with PowerMESH™ Technology for Superior Performance
- Collector-to-Emitter Voltage: 600 V
- Continuous Collector Current @ 25°C: 16 A
- Continuous Collector Current @ 100°C: 10 A
- Pulsed Collector Current: 75
- Gate-to-Emitter Voltage: ±20 V
- Total Dissipation @ 25°C: 32 W
- Operating Junction Temperature: -55 to +150 °C
- Storage Temperature Range:
Top Features:
- Low on voltage drop (VCE(sat))
- Low CRES / CIES ratio (no cross-conduction susceptibility)
- Short-circuit withstand time 10 ?s
- IGBT co-packaged with ultra fast freewheeling diode
The STGF19NC60KD IGBT devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
Applications include high frequency inverters and motor drives.
Related Document: STGF19NC60KD IGBT Data Sheet
Images are for illustration only; actual product may vary.