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S9014 Transistor
A three-layer NPN device with amplified collector current
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 45V
- Collector-Base Voltage (VCBO): 50V
- Continuous Collector Current (IC): 0.5A
- Emitter-Base Voltage (VEBO): 5V
- Operating Temperature Range: -55 to 135°C
- DC Current Gain (hFE): 60-1000
- Transition Frequency (fT): 150MHz
- Power Dissipation (Pd): 0.4W
Top Features:
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
S9014 is a three-layer NPN device within the working range. The collector current IC is a function of the base current IB, with a change in the base current resulting in a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.
Easy to carry and handle, this transistor is a versatile option for electronic projects.
For related documents, refer to the S9014 Transistor Datasheet.
*Images are for illustration only; actual product may vary.